4H Semi-Insulating SiC Wafer With Low TV/BOW/WARP, Dummy Grade,3”Size
PAM-XIAMEN provides high quality single crystal SiC (Silicon Carbide)wafer for electronic and optoelectronic industry. SiC wafer is a next generation semiconductor materialwith unique electrical properties and excellent thermal properties for high temperature and high power device application. SiC wafer can be supplied in diameter 2~6 inch, both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available.
Application of Semi-Insulating SiC Dummy Wafer:
SiC Dummy Wafer can use in researches of Thermal and mechanical fields, and the detail application should be as follows:
1. Researches in SiC Thermal conductivity
2.Researches of SiC phonon
3.Resarches in SiC hardness and mechanical properties
Please contact us for more information:
PROPERTIES OF SEMI-INSULATING SILICON CARBIDE MATERIAL
| Polytype | Single Crystal 4H | Single Crystal 6H |
| Lattice Parameters | a=3.076 Å | a=3.073 Å |
| | c=10.053 Å | c=15.117 Å |
| Stacking Sequence | ABCB | ABCACB |
| Band-gap | 3.26 eV | 3.03 eV |
| Density | 3.21 · 103 kg/m3 | 3.21 · 103 kg/m3 |
| Therm. Expansion Coefficient | 4-5×10-6/K | 4-5×10-6/K |
| Refraction Index | no = 2.719 | no = 2.707 |
| | ne = 2.777 | ne = 2.755 |
| Dielectric Constant | 9.6 | 9.66 |
| Thermal Conductivity | 490 W/mK | 490 W/mK |
| Break-Down Electrical Field | 2-4 · 108 V/m | 2-4 · 108 V/m |
| Saturation Drift Velocity | 2.0 · 105 m/s | 2.0 · 105 m/s |
| Electron Mobility | 800 cm2/V·S | 400 cm2/V·S |
| hole Mobility | 115 cm2/V·S | 90 cm2/V·S |
| Mohs Hardness | ~9 | ~9 |
4H Semi-Insulating SiC Wafer, Dummy Grade,3”Size
| SUBSTRATE PROPERTY | S4H-51-SI-PWAM-250 S4H-51-SI-PWAM-330 S4H-51-SI-PWAM-430 |
| Description | Production Grade 4H SEMI Substrate |
| Polytype | 4H |
| Diameter | (50.8 ± 0.38) mm |
| Thickness | (250 ± 25) μm (330 ± 25) μm (430 ± 25) μm |
| Resistivity (RT) | >1E5 Ω·cm |
| Surface Roughness | < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish) |
| FWHM | <30 arcsec <50 arcsec |
| Micropipe Density | A+≤1cm-2 A≤10cm-2 B≤30cm-2 C≤50cm-2 D≤100cm-2 |
| Surface Orientation |
| On axis <0001>± 0.5° |
| Off axis 3.5° toward <11-20>± 0.5° |
| Primary flat orientation | Parallel {1-100} ± 5° |
| Primary flat length | 16.00 ± 1.70 mm |
| Secondary flat orientation Si-face:90° cw. from orientation flat ± 5° |
| C-face:90° ccw. from orientation flat ± 5° |
| Secondary flat length | 8.00 ± 1.70 mm |
| Surface Finish | Single or double face polished |
| Packaging | Single wafer box or multi wafer box |
| Usable area | ≥ 90 % |
| Edge exclusion | 1 mm |
sic crystal defects
Most of the defects which were observed in SiC were also observed in other crystalline materials. Like the dislocations, stacking faults (SFs), low angle boundaries (LABs) and twins. Some others appear in materials having the Zing- Blend or the Wurtzite structure, like the IDBs. Micropipes and inclusions from other phases mainly appear in SiC.
Historical Lack of SiC Wafers
Reproducible wafers of reasonable consistency, size, quality, and availability are a prerequisite forcommercial mass production of semiconductor electronics. Many semiconductor materials can be meltedand reproducibly recrystallized into large single crystals with the aid of a seed crystal, such as in theCzochralski method employed in the manufacture of almost all silicon wafers, enabling reasonably largewafers to be mass produced. However, because SiC sublimes instead of melting at reasonably attainablepressures, SiC cannot be grown by conventional melt-growth techniques. Prior to 1980, experimentalSiC electronic devices were confined to small (typically ~1
), irregularly shaped SiC crystal plateletsgrown as a byproduct of the Acheson process for manufacturing industrial abrasives (e.g., sandpaper) or by the Lely process . In the Lely process, SiC sublimed from polycrystalline SiC powder attemperatures near 2500°C are randomly condensed on the walls of a cavity forming small, hexagonallyshaped platelets. While these small, nonreproducible crystals permitted some basic SiC electronicsresearch, they were clearly not suitable for semiconductor mass production. As such, silicon became thedominant semiconductor fueling the solid-state technology revolution, while interest in SiC-based microelectronicswas limited.
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