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4 Inch CZ Prime Silicon Wafer With One Side Sputtering Cr/Au Layer Thickness 10nm/50nm 4"

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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4 Inch CZ Prime Silicon Wafer With One Side Sputtering Cr/Au Layer Thickness 10nm/50nm 4"

Brand Name : PAM-XIAMEN

Place of Origin : China

MOQ : 1-10,000pcs

Price : By Case

Payment Terms : T/T

Supply Ability : 10,000 wafers/month

Delivery Time : 5-50 working days

product name : CZ Prime Silicon Wafer

brand : powerway

Dopant : Boron or Phosphorus

Crystalline structure : Monocrystalline

other name : powerway Wafer

size : 4 inch

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4 Inch CZ Prime Silicon Wafer With One Side Sputtering Cr/Au Layer Thickness 10nm/50nm 4"

Found in 1990,Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semicon doctor semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer. For almost 30 years, PAM-XIAMEN aims to manufacture monocrystalline silicon wafer from the pulling process to get the ingot up to the final step which is the cleaning process, and vertically integrating to epi growth(silicon epi wafer) . This production and epi growth flow allows to maintain a reliable and qualitative consistency. Welcome you to enquire our engineer team, and we will give you full technology support.

4inch CZ Prime Silicon Wafer With One Side Sputtering Cr/Au Layer Thickness 10nm/50nm 4"

Type Conduction Type Orientation Diameter(mm) Resistivity(Ω•cm)
CZ N&P <100><110>&<111> 50-300 1-300
MCZ N&P <100><110>&<111> 50-200 1-300
Heavy-doping N&P <100><110>&<111> 50-200 0.001-1

Parameter Unit Value
Crystalline structure - Monocrystalline
Growth technique - CZ
Crystal Orientation - 100±0.5°
Conductance type - P or N
Dopant - Boron or Phosphorus
Diameter mm 100
Resistivity Ω/cm2 Any
Thickness um 200±25µm
TTV um ≤10 um
BOW um ≤30 um
(G)STIR um Customer standard
Site Flatness-STIR um Customer standard
Edge Exclusion Zone mm SEMI STD or Customer Request
LPD's - 0.33µm, <qty30 or Customer Request
Oxygen Concentration ppma <1E16/cc
Carbon Concentration ppma <1E16/cc
RRG - ≤15%
Front Surface - Polished
Back Surface - Polished
Edge Surface Condition SEMI STD or Customer Request
Primary Flat Length mm SEMI STD
Primary Flat Orientation(100/111) & Angle(°) SEMI STD
Secondary Flat Length mm SEMI STD
Secondary Flat Orientation(100/111) & Angle(°) SEMI STD
Laser mark - SEMI STD or Customer Request
One side sputtering Cr/Au Layer with the thickness 10nm/50nm
Packaging Packaged in a class 100 clean room environment,
Heat-sealed plastic inner/aluminium foil outer bags,
Vacuum Packing
If specific requirement by customer, will adjust accordingly

What is Silicon Wafer Used For?

Silicon wafer’s primary use is in integrated circuits. Integrated circuits power many of the devices that modern society uses every day. Computers and smartphones are just two of the devices that are dependent on this technology. Although other semiconductors have been tested overtime, silicon has proved to be stable option. Other uses include sensors, such as the tire pressure sensor system, and solar cells. Silicon wafers absorb the photons in sunlight and this in turn create electricity.

Are You Looking for an Silicon Wafer?

PAM-XIAMEN is your go-to place for semiconductor wafers, including Silicon wafers, as we have been doing it for almost 30 years! Send us enquiry to learn more about the wafers that we offer and how we can help you with your next project. Our group team can give you technology support. send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com


Product Tags:

float zone wafer

      

epitaxial silicon wafer

      
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