4 Inch Silicon Wafer CZ P Type Boron Doped Orientation 100 Prime Grade 4"
Found in 1990,Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semicon doctor semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer. For almost 30 years, PAM-XIAMEN aims to manufacture monocrystalline silicon wafer from the pulling process to get the ingot up to the final step which is the cleaning process, and vertically integrating to epi growth(silicon epi wafer) . This production and epi growth flow allows to maintain a reliable and qualitative consistency. Welcome you to enquire our engineer team, and we will give you full technology support.
4inch Silicon Wafer CZ P Type Boron Doped Orientation 100 Prime Grade 4"
| Type |
Conduction Type |
Orientation |
Diameter(mm) |
Resistivity(Ω•cm) |
| CZ |
N&P |
<100><110>&<111> |
50-300 |
1-300 |
| MCZ |
N&P |
<100><110>&<111> |
50-200 |
1-300 |
| Heavy-doping |
N&P |
<100><110>&<111> |
50-200 |
0.001-1 |
| Parameter |
Unit |
Value |
| Crystalline structure |
- |
Monocrystalline |
| Growth technique |
- |
CZ |
| Crystal Orientation |
- |
100 |
| Conductance type |
- |
P |
| Dopant |
- |
Boron |
| Diameter |
mm |
100 |
| Resistivity |
Ω/cm2 |
<40 |
| Thickness |
um |
200±25µm
525±25µm
675±25μm
1500± 25µm |
| TTV |
um |
≤10 um, < 5 um |
| BOW |
um |
≤40 um |
| Warp |
um |
≤40 um |
| (G)STIR |
um |
Customer standard |
| Site Flatness-STIR |
um |
Customer standard |
| Edge Exclusion Zone |
mm |
SEMI STD or Customer Request |
| LPD's |
- |
≥0.3μm, <30count or Customer Request |
| Oxygen Concentration |
ppma |
<1E16/cc |
| Carbon Concentration |
ppma |
<1E16/cc |
| RRG |
- |
≤15% |
| Front Surface |
- |
Polished, Epi ready |
| Back Surface |
- |
Polished or Etched |
| Edge Surface Condition |
|
SEMI STD or Customer Request |
| Primary Flat Length |
mm |
SEMI STD |
| Primary Flat Orientation(100/111) & Angle(°) |
|
SEMI STD |
| Secondary Flat Length |
mm |
SEMI STD |
| Secondary Flat Orientation(100/111) & Angle(°) |
|
SEMI STD |
| Laser mark |
- |
SEMI STD or Customer Request |
| Packaging |
|
Packaged in a class 100 clean room environment,
Heat-sealed plastic inner/aluminium foil outer bags,
Vacuum Packing |
| If specific requirement by customer, will adjust accordingly |
What is the application of silicon wafer?
Monocrystalline silicon wafer is mainly used to make semiconductor components, its detail application: it is the raw material of semiconductor silicon device, used for making high power rectifier, high power transistor, diode, switch device, etc. Monocrystalline silicon grown by Czochralski method is mainly used in semiconductor integrated circuit, diode, epitaxial wafer substrate and solar cell. Zone melting single crystal is mainly used in the field of high-voltage high-power controllable rectifier devices, widely used in high-power power transmission and transformation, electric locomotive, rectifier, frequency conversion, electromechanical integration, energy-saving lamp, television and other products. Epitaxial wafer are mainly used in the field of integrated circuits
PAM-XIAMEN can offer you technology and wafer support, for more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system. Test report is provided for each shipment, and each wafer are warranty.Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China.
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